EI3361 Semiconductor Devices and Circuits Laboratory Syllabus:

EI3361 Semiconductor Devices and Circuits Laboratory Syllabus – Anna University Regulation 2021

COURSE OBJECTIVES:

 To understand the behavior of semiconductor devices experimentally.
 To design the amplifiers and oscillators.
 To analyze the rectifier and filters.

LIST OF EXPERIMENTS

1. Characteristics of Semiconductor diode.
2. Characteristics of Zener diode and Zener as series voltage regulator.
3. Single Phase half-wave and full wave rectifiers with capacitive filters.
4. Characteristics of JFET.
5. Characteristics of UJT and generation of saw tooth waveform.
6. Characteristics of a BJT under common emitter and common base configurations.
7. Design and testing of Common Emitter amplifier.
8. Design and testing of Common Source amplifier.
9. Differential amplifier using FET.
10. Design and testing of RC phase shift and LC oscillators.
11. Design and testing of Feedback amplifiers (Any one type)
12. Simulation of rectifier circuits using PSIM/SIMULINK

TOTAL: 45 PERIODS

COURSE OUTCOMES:

AT THE END OF THE COURSE, LEARNERS WILL BE ABLE TO:
CO1 Determine the Breakdown voltage, forward and reverse resistance of PN junction diode and Zener diode and calculate the ripple factor of rectifier circuits with filter.
CO2 Calculate the hybrid parameters of BJT under CE and CB configuration
CO3 Obtain the frequency response of CE amplifier and CS amplifier
CO4 Obtain the UJT and JFET parameters from the characteristics and also to calculate the gain of differential amplifier using JFET.
CO5 Design the RC and LC tuned oscillators for a given oscillating frequency.
CO6 Analyze the input and output performance of the given diode based circuit using simulation tools.

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