VL3202 Semiconductors and Devices Syllabus:
VL3202 Semiconductors and Devices Syllabus – Anna University Regulation 2021
UNIT I ELECTRONIC STATES
Quantum free electron theory – Fermi distribution and energy – Density of states Dynamics of electrons in periodic potential – Electron in a periodic potential – Energy bands in solids–Conductors – Semiconductors – Insulators – tight binding approximation – Electron effective mass– the concept of hole -– properties of conduction and valence bands.
UNIT II CARRIERS AND DOPING
Intrinsic concentration – intrinsic Fermi level – n and p type doping – density of carriers in extrinsic semiconductors and their temperature dependence – extrinsic semiconductor Fermi energy level – degenerate and non-degenerate semiconductors – Direct and Indirect band gap semiconductors – band- gap engineering – electrons and holes in quantum wells and super lattices.
UNIT III PN DIODE AND BIPOLAR JUNCTION TRANSISTOR
PN junction diode, current equations, V-I characteristics, Bipolar Junction Transistor- bipolar transistor action, minority carrier, distribution, low frequency common base, current gain, non-ideal effects, equivalent circuits, Ebers Moll Model, Hybrid-pi model, frequency limitations, large signal switching characteristics, SiGe and hetro-junction.
UNIT IV FIELD EFFECT TRANSISTORS
Two terminal MOS structures, threshold voltage and charge distribution, capacitance-voltage characteristics, MOSFET structures, I-V relationships, transconductance and substrate effects, frequency limitations, non-ideal effects, MOSFET scaling, threshold voltage modification due to short and narrow channel effects, avalanche breakdown, drain induced barrier effects, Basic features of FinFET devices and operation.
UNIT V SPECIAL SEMICONDUCTOR DEVICES
IGBT, LED, LCD, Photo transistor, Opto Coupler, Solar cell, MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode-Gallium Arsenide device, UJT
45 PERIODS
PRACTICALS:
LIST OF EXPERIMENTS
1. Characteristics of PN Junction Diode and Zener diode.
2. Characteristics of LED
3. Characteristics of phototransistor
4. Characteristics of BJT
5. Characteristics of UJT
6. MOSFET Drain current and Transfer Characteristics.
30 PERIODS
TOTAL : 75 PERIODS
COURSE OUTCOMES:
At the end of the course, students will be able to
CO1: Understand the basics of electronic states and energy band structure formation
CO2: Recognize the importance of carrier concentration and doping in semiconductors
CO3: Understand the operation and characteristics of PN junction and BJTs.
CO4: Comprehend the characteristics of the field effect transistors.
CO5: Realize the physics of special semiconductor devices.
TEXT BOOKS:
1. R.F.Pierret. Semiconductor Device Fundamentals. Pearson, 2006
2. D.Neamen and D.Biswas. Semiconductor physics and devices. McGraw Hill Education, 2017
3. Samar K. Saha. FinFET Devices for VLSI Circuits and Systems. CRC Press, 2021
REFERENCE BOOKS:
1. N.Garcia, A. Damask and S.Schwarz. Physics for Computer Science Students. SpringerVerlag, 2012.
2. Umesh Mishra and Jasprit Singh. Semiconductor Device Physics and Design. Springer, 2008.
3. Nandita Dasgupta and Amitava Dasgupta. Semiconductor Devices: Modelling and Technology.PHI Learning Pvt. Ltd. 2004
4. F.H. Mitchell, ‘ Introduction to Electronics Design” Prentice Hall of India Pvt. Lt, 1995.
5. Robert L. Boylestad, Louis Nashelsky “ Electronic devices and circuit theory” , Pearson, 2009.