PTCEC363 Wide Bandgap Devices Syllabus:
PTCEC363 Wide Bandgap Devices Syllabus – Anna University Part time Regulation 2023
COURSE OBJECTIVES:
Introduce the concept of wide band gap (WBG) devices and its application in real world
Advantages and disadvantages of WBG devices
Provide an introduction to basic operation of WBG power devices
Learn Design principles of modern power devices
Ability to deal high frequency design complexity
UNIT I WBG DEVICES AND THEIR APPLICATION IN REAL WORLD
Review of semiconductor basics, Operation and characteristics of the SiC Schottky Barrier Diode, SiC DMOSFET and GaN HEMT, Review of Wide bandgap semiconductor technology – Advantages and disadvantages
UNIT II SWITCHING CHARACTERIZATION OF WBG
Turn-on and Turn-off characteristics of the device, Hard switching loss analysis, Double pulse test set-up
UNIT III DRIVERS FOR WIDE BAND GAP DEVICES
Gate driver, Impact of gate resistance, Gate drivers for wide bandgap power devices , Transient immunity integrated gate drivers
UNIT IV HIGH FREQUENCY DESIGN COMPLEXITY AND PCB DESIGNING
Effects of parasitic inductance, Effects of parasitic capacitance , EMI filter design for high frequency power converters High frequency PCB design, Conventional power loop design, High frequency power loop optimization, Separation of power from signal PCB
UNIT V APPLICATIONS OF WIDE BANDGAP DEVICES
Consumer electronics applications, Wireless power transfer applications, Electric vehicle applications , Renewable energy sources applications
30 PERIODS
PRACTICAL EXERCISES: 30 PERIODS
1. Conduct switching loss and Magnetic loss on Low side
2. Conduct Double pulse test (DPT) and learn IEC 60747 -8/9 standards
3. Conduct experiments for Diode reverse recovery on High side
4. Conduct Power analysis and harmonic measurement
5. Measure Turn on /off delay , . Calculate recovery softness factor , measure reverse recovery energy.
List of Equipments needed for 30 students in a batch (6 students in bench)
2. 1GHz Flexi channel oscilloscope with 6 channels – #5
3. 2ch AFG with 9inch touchscreen and built-in Double Pulse Test application to generate atleast 2 varying pulse widths, 16Mpts memory – #1
4. Power supplies – Programmable DC Power Supply, 720W (for High Voltage side) and Programmable Single Channel DC Power Supply, 192W (to drive Gate drive circuit) – #1
5. Voltage Probes to measure Vgs (low side) – passive probe or differential probe 200MHz – #15
6. Voltage Probes to measure Vgs (high side) – 1GHz, isolated probes with MMCX adapter tips – #1 nos
7. Current Probes to measure drain current – 30A with 120Mz BW – #5
COURSE OUTCOMES:
Upon successful completion of the course the student will be able to
CO1: Students master design principles of power devices
CO2: Students become familiar with reliability issues and testing methods
CO3: An ability to design and conduct experiments, as well as to analyze and interpret data
CO4: Student to get real life experience and to know practical applications of WBG
CO5:Indepth knowledge on practical usage of this technology
TOTAL:60 PERIODS
TEXT BOOKS
1. A. Lidow, J. Strydom, M. D. Rooij, D. Reusch, GaN Transistors for Efficient Power Convertion, Wiley, 2014, ISBN-13: 978-1118844762.
2. G. Meneghesso, M. Meneghini, E. Zanoni, “Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion,” Springer International Publishing, 2018, ISBN: 978-3-319-77993-5.
REFERENCES
1. F. Wang, Z. Zhang and E. A. Jones, Characterization of Wide Bandgap Power Semiconductor Devices, IET, ISBN-13: 978-1785614910 (2018).
2. B.J.Baliga, “Gallium Nitride and Silicon Carbide Power Devices,” World Scientific Publishing Company (3 Feb. 2017).
3. L. Corradini, D. Maksimovic, P. Mattavelli, R. Zane, “Digital Control of HighFrequency Switched-Mode Power Converters”, Wiley, ISBN-13: 978-1118935101 (9th June, 2015).